參數(shù)資料
型號: AMIS39100AGA
英文描述: Octal High Side Driver with Protection
中文描述: 八路高端驅(qū)動器,帶有保護
文件頁數(shù): 7/16頁
文件大小: 376K
代理商: AMIS39100AGA
AMIS-39100:
Octal High Side Driver with Protection
Data Sheet
8.3 Electrical Parameters
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above the
maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type (see Section 8.4).
8.3.1. Operating Ranges
Table 6: Operating Ranges
Symbol
VDDN
Vdig_in
VB
Tamb
Notes:
(1)
The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C.
Description
Digital power supply voltage
Voltage on digital inputs CLK, PDB, WR, DIN
DC battery supply on Pins VB1 to VB4
Ambient temperature
Min.
3.1
-0.3
3.5
-40
Max.
5.5
VDDN
16
105
Unit
V
V
V
°C
8.3.2. Electrical Characteristics
Table 7: Electrical Characteristics
Symbol
I_VB_norm
(1)
Description
Consumption on VB without load currents
In normal mode of operation PDB = high
Sum of VB and VDDN consumption in power down mode of operation
PDB = low, VDDN 3.3V, VB = 12V, 23°C ambient
CLK and WR are at VDDN voltage
Sum of VB and VDDN consumption in power down mode of operation
PDB = low, VDDN 5V, VB = 24V, 23°C ambient
CLK and WR are at VDDN voltage
VB consumption in power down mode of operation PDB = low, VB = 16V
Consumption on VDDN
In normal mode of operation PDB = high
CLK is 500kHz, VDDN = 5.5V, VB = 16V
On resistance of the output drivers 1 through 8
Vb= 16V (normal battery conditions and Tamb = 25°C)
Vb = 4.6V (worst case battery condition and Tamb = 25°C)
Internal over-current limitation of HS driver outputs
The time from short of HS driver OUTx pin to GND and the driver
de-activation; driver is Off.
Detection works from VB minimum of 7V
VDDN minimum is 3V
High TSD threshold for junction temperature (temperature rising)
TSD hysteresis for junction temperature
Min.
Max.
3.5
Unit
mA
I_PDB_3.3
(1)(2)
25
μA
I_PDB_5
(1)(2)
40
μA
I_PDB_MAX_VB
I_VDDN_norm
10
1.6
μA
mA
R_on_1..8
1
3
2
A
μs
I_OUT_lim_x
(1)
T_shortGND_HSdoff
0.65
5,4
TSD_H
(1)
TSD_HYST
Notes:
(1)
(2)
130
9
170
18
°C
°C
The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj.
The cumulative operation time mentioned above may cause permanent device failure.
7
AMI Semiconductor
– Jan. 07, M-20557-002
www.amis.com
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