參數(shù)資料
型號: AMIS-721250
英文描述: Contact Image Sensor
中文描述: 接觸式圖像傳感器
文件頁數(shù): 5/12頁
文件大?。?/td> 558K
代理商: AMIS-721250
AMIS-721250: Contact Image Sensor
Data Sheet
4.3 Wafer Scribe Line
Figure 3 outlines the scribe line dimensions surrounding the sensor die on a wafer.
60μm
60μm
55μm
55μm
15μm
425μm
14560μm
Figure 3: Wafer Scribe Line
5.0 Electro-Optical Specifications
Table 2 lists the electro-optical specifications of the AMIS-721250 sensor at 25
°
C and Vdd = 5.0V.
Table 2: Electro-Optical Specifications
Parameter
Number of pixels
(1)
Pixel-to-pixel spacing
(1)
Sensitivity @ 600dpi
(2)
Sensitivity @ 1200dpi
Saturation voltage
(3)
Photo-response non-uniformity
(4)
Adjacent photo-response non-uniformity
(5)
Dark output voltage level
(6)
Dark output non-uniformity
(7)
Random thermal noise (rms)
(8)
Sensor-to-sensor photo-response non-uniformity
(9)
Photo response linearity
Analog output drive current
Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.
Symbol
Sv
VSat
Up
Upn
Vd
Ud
Vno
Usensor
PRL
Iout
Min.
Typ.
1220
610
1.65
1.7
3.0
>1.0
Max.
Units
μ
m
344 or 688
42.3 / 21.15
344 or 688
42.3 / 21.15
V / uJ / cm
2
Volts
%
%
V
mV
mV
%
%
mA
15
15
100
10
2
5
AMI Semiconductor
– Dec. 05, M-20496-004
www.amis.com
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