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參數(shù)資料
| 型號(hào)： | AMIS-39101 |
| 英文描述： | Octal High-Side Driver with Protection |
| 中文描述： | 八路高端驅(qū)動(dòng)器的保護(hù) |
| 文件頁(yè)數(shù)： | 7/15頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | AMIS-39101 |
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AMIS-39101:
Octal High-Side Driver with Protection
Data Sheet
8.3 Electrical Parameters
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above the
maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type (see Section 8.4).
8.3.1. Operating Ranges
Table 6: Operating Ranges
Symbol
Description
Min.
Max.
Unit
VDDN
Digital power supply voltage
3.1
5.5
V
Vdig_in
VS
(1)
Voltage on digital inputs CLK, PDB, WR, DIN
-0.3
VDDN
V
VS power supply on Pins VS1 to VS4
3.5
28
V
Tamb
Note:
Ambient temperature
-40
85
°C
(1)
The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C.
8.3.2. Electrical Characteristics
Table 7: Electrical Characteristics
Symbol
Description
Consumption on VS without load currents
In normal mode of operation PDB = high
Sum of VS and VDDN consumption in power-down mode of operation
PDB = low, VDDN 3.3V, VS = 24V, 23°C ambient
CLK and WR are at VDDN voltage
Sum of VS and VDDN consumption in power-down mode of operation
PDB = low, VDDN 5V, VS = 24V, 23°C ambient
CLK and WR are at VDDN voltage
VS consumption in power-down mode of operation PDB = low, VS = 28V
Consumption on VDDN
In normal mode of operation PDB = high
CLK is 500kHz, VDDN = 5.5V, VS = 28V
On resistance of the output drivers 1 through 8
t VS= 24V (nominal VS power supply condition)
t VS = 4.6V (worst case VS power supply condition)
Internal over-current limitation of HS driver outputs
The time from short of HS driver OUTx pin to GND and the driver
deactivation; driver is Off
Detection works from VS minimum of 7V
VDDN minimum is 3V
High TSD threshold for junction temperature (temperature rising)
TSD hysteresis for junction temperature
Min.
Max.
Unit
I_VS_norm
(1)
3.5
mA
I_PDB_3.3
(1)(2)
25
μA
I_PDB_5
(1)(2)
40
μA
I_PDB_MAX_VS
10
μA
I_VDDN_norm
(1)
1.6
mA
R_on_1..8
1
3
2
A
I_OUT_lim_x
(1)
0.65
T_shortGND_HSdoff
5,4
μs
TSD_H
(1)
TSD_HYST
Notes:
(1)
(2)
130
9
170
18
°C
°C
The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj.
The cumulative operation time mentioned above may cause permanent device failure.
8.4 Load Specific Parameters
High-side driver parameters for specific loads are specified in following categories:
A. Parameters for inductive loads up to 350mH and T
ambient
up to 85°C
B. Parameters for inductive loads up to 300mH and T
ambient
up to 85°C
C. Parameters for resistive loads and T
ambient
up to 85°C
7
AMI Semiconductor
– November 06 - M-20638-001
www.amis.com
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