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參數(shù)資料
| 型號(hào)： | AME8845AEBT180Z |
| 廠商： | AME, Inc. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 3A CMOS LDO |
| 中文描述： | 3A條的CMOS LDO穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 11/18頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | AME8845AEBT180Z |
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AME, Inc.
11
AME8845
3A CMOS LDO
The AME8845 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro-
tection circuits. During normal operation, the error ampli-
fier compares the output voltage to a precision reference.
Over-current and Thermal shutdown circuits become ac-
tive when the junction temperature exceeds 140
o
C, or
the current exceeds 4.5A. During thermal shutdown, the
output voltage remains low. Normal operation is restored
when the junction temperature drops below 110
o
C.
The AME8845 behaves like a current source when the
load reaches 4.5A. However, if the load impedance drops
below 0.3 ohms, the current drops back to 600mA to
prevent excessive power dissipation. Normal operation
is restored when the load resistance exceeds 0.75 ohms.
n
Detailed Description
n
External Capacitors
The AME8845 is stable with an output capacitor to
ground of 2.2
μ
F or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Con-
versely, Aluminum Electrolytic capacitors exhibit the high-
est ESR, resulting in the poorest AC response. Unfortu-
nately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1
μ
F ceramic
capacitor with a 10
μ
F Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the in-
put and ground to stabilize Vin. The input capacitor should
be at least 0.1
μ
F to have a beneficial effect.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
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| AME8845AEBT250Z | 3A CMOS LDO |
| AME8845AEBT330Z | 3A CMOS LDO |
| AME8845AEBV150Z | 3A CMOS LDO |
| AME8845AEBV180Z | 3A CMOS LDO |
| AME8845AEBV250Z | 3A CMOS LDO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AME8853-AET330 | 制造商:AME 功能描述:High PSRR 60dB LDO,IQ 60 uA,300mA ,FIX 3.3V,SOT23,3K/REEL |
| AME8855-AET330 | 制造商:AME 功能描述:600mA,FIX 3.3V,SOT23,60dB,IN G O,3K/REEL |
| AME8855-AGT250 | 制造商:AME 功能描述:PSRR 60dB LDO,IQ 60 uA,600mA ,FIX 2.5V,SOT223,IGO,2.5K/Reel |
| AME8855-BET330 | 制造商:AME 功能描述:600mA,FIX 3.3V,SOT23,60dB,G O IN ,3K/REEL |
| AME8855-BGT250 | 制造商:AME 功能描述:PSRR 60dB LDO,IQ 60 uA,600mA ,FIX 2.5V,SOT223,GOI,2.5K/Reel |
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