參數(shù)資料
型號： AME8570AEITCF46Z
廠商： AME, Inc.
英文描述： mProcessor Supervisory
中文描述： mProcessor監(jiān)督
文件頁數(shù)： 2/5頁
文件大?。?/td> 273K
代理商： AME8570AEITCF46Z
www.vishay.com
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81002
2
Rev. 1.7, 08-Mar-11
CQY37N
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
1020
3040506070
8090100
21319
T
amb - Ambient Temperature (°C)
P
V
-
Power
Dissipation
(mW)
R
thJA = 450 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21320
I F
-
Forward
Current
(mA)
R
thJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 50 mA, tp 20 ms
VF
1.3
1.6
V
Temperature coefficient of VF
IF = 100 mA
TKVF
- 1.3
mV/K
Breakdown voltage
IR = 100 μA
V(BR)
5μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
50
pF
Radiant intensity
IF = 50 mA, tp 20 ms
Ie
2.2
5
11
mW/sr
Radiant power
IF = 50 mA, tp 20 ms
e
4.8
10
17.8
mW
Temperature coefficient of
e
IF = 50 mA
TK
e
- 0.8
%/K
Angle of half intensity
± 12
deg
Peak wavelength
IF = 50 mA
p
950
nm
Spectral bandwidth
IF = 50 mA
50
nm
Rise time
IF = 100 mA
tr
800
ns
IF = 1.5 A, tp/T = 0.01, tp 10 μs
tr
400
ns
Virtual source diameter
d
1.2
mm
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I
-Forward
Current
(mA)
F
4
3
2
1
0
VF - Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V
F
rel
-
Relative
Forward
Voltage
(V)
94 7990
T
amb - Ambient Temperature (°C)
100
80
60
40
20
0
I
F = 10 mA
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