參數(shù)資料
型號(hào)： AME8570AEITCF29Z
廠商： AME, Inc.
英文描述： mProcessor Supervisory
中文描述： mProcessor監(jiān)督
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 90K
代理商： AME8570AEITCF29Z
Document Number: 81001
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.8, 16-May-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
Vishay Semiconductors
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7917
103
101
102
104
100
0.1
1
10
100
IF – Forward Current (mA)
I
–
Radiant
Intensity
(mW/sr)
e
0.1
1
10
100
110
100
1000
13718
IF - Forward Current (mA)
-Radiant
Power
(mW)
e
Φ
- 10
10
50
0
100
0
0.4
0.8
1.2
1.6
I e
rel
;
140
94 7993
IF = 20 mA
Φ
e
rel
Tamb - Ambient Temperature (°C)
900
950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φ
e
rel
-
Relative
Radiant
Power
I
F = 100 mA
0.4
0.2
0
0.2
0.4
I
–
Relative
Radiant
Intensity
e
rel
0.6
94 7919
0.6
0.9
0.8
0°
30°
10
°
20
°
40°
50°
60°
70°
80°
0.7
1.0
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