- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378310 > AMB0480xxRH8 (Integrated Device Technology, Inc.) ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES PDF資料下載
參數(shù)資料
| 型號： | AMB0480xxRH8 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| 中文描述： | 高級內(nèi)存緩沖的全緩沖DIMM模塊 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 264K |
| 代理商： | AMB0480XXRH8 |
12
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
Symbol
V
DD
V
IN
(DDR2).
V
OUT
(DDR2)
pin relative to Vss
(2)
I
INK
Input Clamp Current
(V
IN
< 0 or V
IN
> V
DD
)
I
OUTK
Output Clamp Current
(V
OUT
< 0 or V
OUT
> V
DD
)
I
OUT
Continous Output Current
(V
OUT
= 0 to V
DD
)
N/A
Continuous current through
each V
DD
or GND
V
CC
Supply voltage for Core
and High Speed Interface
T
J
Junction Temperature
T
STG
Storage Temperature Range
Description
Mn
-0.5
0.5
Max
+2.3
+2.3
Unit
V
V
Supply voltage DRAMInterface
Voltage on any DDR2 interface
+30
mA
+30
mA
+30
mA
+100
mA
-0.3
+1.75
V
+125
+100
°C
°C
–55
ABSOLUTE MAX IMUM RATINGS
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximumrating
conditions for extended periods may affect reliability.
2. The input and output negative-voltage ratings may be exceeded if the input and output
clamp-current ratings are observed. This value is limted to 2.3V maximum
ADVANCED MEMORY BUFFER
NORMAL MODE DC ELECTRICAL
PARAMETERS
Parameter
V
CC
link / core
(1,2,3,4)
V
DD
V
DDSPD
Mn
1.425
1.7
3.0
Typ
1.5
1.8
3.3
Max
1.59
1.9
3.6
Unit
V
V
V
NOTES:
1. AMB 1.5V voltage regulation as measured at the package Balls.
2. DC defined as 0 KHz to 30 KHz.
3. DC + AC specified as 1.5V +6%, -5% 30KHz to 1 MHz.
4. There is also a +7%, -5% tolerance allowed for current load steps associated with
initialization/error-recovery state transitions, such as into and out of EI, IBIST, and
MEMBIST. For these transitions, a temporary voltage overshoot is expected and
acceptable as long as it is within +7% (step transition for 20
μ
s
and maximumduty cycle
of 10
-6
%). Transitions between Active and Idle states are not included in this +7%,
-5% tolerance.
ELECTRICAL, POWER, AND THERMAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMB0480xxRJ | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0480xxRJ8 | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AME1084 | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
| AME1084ACBT | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
| AME1084ACCS | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMB0480XXRJ | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0480XXRJ8 | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| AMB0482C1RJ | 功能描述:緩沖器和線路驅(qū)動器 RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| AMB0482C1RJ8 | 功能描述:緩沖器和線路驅(qū)動器 RoHS:否 制造商:Micrel 輸入線路數(shù)量:1 輸出線路數(shù)量:2 極性:Non-Inverting 電源電壓-最大:+/- 5.5 V 電源電壓-最小:+/- 2.37 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Reel |
| AMB0483D0RJ | 制造商:Integrated Device Technology Inc 功能描述:ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM (D0). BGA655 - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。