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參數(shù)資料
| 型號： | AM83135-050 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Orange; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 78K |
| 代理商： | AM83135-050 |
.400 x .400 2NLFL (S042)
hermetically sealed
February 3, 1997
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
10:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
1.0 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC
Hermetic/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C)
Symbol
P
DISS
I
C
Parameter
Value
11.5
0.45
Unit
W
A
Power Dissipation*
Device Current*
(T
C
≤
100
°
C)
V
CC
Collector-Supply Voltage*
34
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°
C
°
C
T
STG
Storage Temperature
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
13.0
°
C/W
*Applies only to rated RF amplifier operation
AM83135-001
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
BRANDING
83135-1
ORDER CODE
AM83135-001
1/5
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