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參數(shù)資料
| 型號(hào)： | AM80610-030 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors UHF Communications Applications(用于超高頻通信的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 44K |
| 代理商： | AM80610-030 |
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
30 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
DESCRIPTION
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPAC
hermetic
package.
PIN CONNECTION
BRANDING
80610-30
ORDER CODE
AM80610-030
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
Parameter
Value
57
Unit
W
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
(T
C
≤
50
°
C)
3.0
32
200
A
V
°
C
°
C
T
STG
Storage Temperature
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
2.6
°
C/W
*Appliesonly torated RF amplifieroperation
AM80610-030
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
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