
V2.00
Switched Low Noise Amplifier, 800-1000 MHz
AM55-0016
AM55-0016
M/A-COM Division of AMP Incorporated
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North America: Tel. (800) 366-2266, Fax (800) 618-8883
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Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
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Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
* If specific reel size is required, consult factory for part number.
Ordering Information
Part Number
AM55-0016
AM55-0016TR
AM55-0016RTR
AM55-0016SMB
Package
MSOP 8-Lead Plastic Package
Forward Tape and Reel*
Reverse Tape and Reel*
Designer’s Kit
MSOP-8
Features
High Gain State:
- Gain: 16dB, Noise Figure: 1.6dB
- Input IP3: +3dBm (@2.7V, 25mA)
Low Gain State:
- Insertion Loss: 5dB, Input IP3: +24dBm
Single Supply: +2.7 to +5 VDC
Low Cost MSOP-8 Plastic Package
Adjustable current: 10 to 30 mA with external resistor
Description
M/A-COM’s AM55-0016 is a high dynamic range, switchable
low noise amplifier in a low cost, MSOP 8-lead, surface mount,
plastic package. The design utilizes a patented switching
technique to provide a low insertion loss, high input IP
bypass
state in parallel with the high gain, low noise state. The LNA
employs external input matching to obtain optimum noise figure
performance and operating frequency flexibility. The
AM55-0016 also features flexible biasing to control the current
consumption vs. dynamic range trade-off. Its current can be
controlled over a range of 10 mA to 30 mA with an external
resistor.
Typical applications include receiver front ends in cellular band
CDMA handsets. It is also useful as a switched gain block, buffer
or driver in portable cellular systems.
The AM55-0016 is fabricated using a low-cost 0.5-micron gate
length GaAs MESFET process. The process features full
passivation for increased performance and reliability.
Switched Low Noise Amplifier
800 - 1000 MHz
-B-
ID PIN
0.193
010
R
0 118
.020
020
0.0256
0 118
12°
4X
0 034
0 040
0 008
0 013
12°
4X
0.007
0 0215
3°
RF
IN
RF
OUT
Functional Block Diagram
Electrical Specifications
Parameter
HIGH GAIN STATE,
Voltage control = 2.7 volts
Gain
Noise Figure
Input IP3
1
T
A
= +25°C, Z
0
=50
, F=881 MHz, P
IN
= -30 dBm, V
DD
=2.7 V, I
DD
=10 mA
Test Conditions
Units
Min.
Typ.
Max.
dB
dB
dBm
dBm
—
dB
—
—
—
—
—
—
16
1.6
-2
+3
2.0:1
32
—
1.8
—
—
I
DD
= 10 mA, V
DD
= 2.7V
I
DD
= 25 mA, V
DD
= 2.7V
Input VSWR / Output VSWR
Reverse Isolation
LOW GAIN STATE,
Voltage control = 0 volts
Insertion Loss
Input IP3
Input VSWR
Output VSWR
1. Refer to Typical Performance Datafor performance versus frequency and bias.
—
I
DD
= 100
μ
A
dB
dBm
—
—
—
—
—
—
5
—
—
—
—
+24
2.3:1
2.0:1