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    參數(shù)資料
    型號: AM49LV128BMH11NS
    廠商: SPANSION LLC
    元件分類: 存儲器
    英文描述: 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
    中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
    封裝: 12 X 9 MM, FBGA-64
    文件頁數(shù): 24/98頁
    文件大小: 1016K
    代理商: AM49LV128BMH11NS
    22
    Am49LV128BM
    June 17, 2004
    Hardware Data Protection
    The command sequence requirement of unlock cycles
    for programming or erasing provides data protection
    against inadvertent writes (refer to Table 9 for com-
    mand definitions). In addition, the following hardware
    data protection measures prevent accidental erasure
    or programming, which might otherwise be caused by
    spurious system level signals during V
    CC
    power-up
    and power-down transitions, or from system noise.
    Low V
    CC
    Write Inhibit
    When V
    CC
    is less than V
    LKO
    , the device does not ac-
    cept any write cycles. This protects data during V
    CC
    power-up and power-down. The command register
    and all internal program/erase circuits are disabled,
    and the device resets to the read mode. Subsequent
    writes are ignored until V
    CC
    is greater than V
    LKO
    . The
    system must provide the proper signals to the control
    pins to prevent unintentional writes when V
    CC
    is
    greater than V
    LKO
    .
    Write Pulse “Glitch” Protection
    Noise pulses of less than 5 ns (typical) on OE#, CE#
    or WE# do not initiate a write cycle.
    Logical Inhibit
    Write cycles are inhibited by holding any one of OE# =
    V
    IL
    , CE# = V
    IH
    or WE# = V
    IH
    . To initiate a write cycle,
    CE# and WE# must be a logical zero while OE# is a
    logical one.
    Power-Up Write Inhibit
    If WE# = CE# = V
    IL
    and OE# = V
    IH
    during power up,
    the device does not accept commands on the rising
    edge of WE#. The internal state machine is automati-
    cally reset to the read mode on power-up.
    COMMON FLASH MEMORY INTERFACE (CFI)
    The Common Flash Interface (CFI) specification out-
    lines device and host system software interrogation
    handshake, which allows specific vendor-specified
    software algorithms to be used for entire families of
    devices. Software support can then be device-inde-
    pendent, JEDEC ID-independent, and forward- and
    backward-compatible for the specified flash device
    families. Flash vendors can standardize their existing
    interfaces for long-term compatibility.
    This device enters the CFI Query mode when the sys-
    tem writes the CFI Query command, 98h, to address
    55h, any time the device is ready to read array data.
    The system can read CFI information at the addresses
    given in Tables 5–8. To terminate reading CFI data,
    the system must write the reset command.
    The system can also write the CFI query command
    when the device is in the autoselect mode. The device
    enters the CFI query mode, and the system can read
    CFI data at the addresses given in Tables 5–8. The
    system must write the reset command to return the de-
    vice to reading array data.
    For further information, please refer to the CFI Specifi-
    cation and CFI Publication 100, available via the
    World Wide Web at http://www.amd.com/flash/cfi. Al-
    ternatively, contact an AMD representative for copies
    of these documents.
    Table 5.
    CFI Query Identification String
    Addresses (x16)
    Data
    Description
    10h
    11h
    12h
    0051h
    0052h
    0059h
    Query Unique ASCII string “QRY”
    13h
    14h
    0002h
    0000h
    Primary OEM Command Set
    15h
    16h
    0040h
    0000h
    Address for Primary Extended Table
    17h
    18h
    0000h
    0000h
    Alternate OEM Command Set (00h = none exists)
    19h
    1Ah
    0000h
    0000h
    Address for Alternate OEM Extended Table (00h = none exists)
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