- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375307 > AM49LV128BMAH15NT (SPANSION LLC) 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) PDF資料下載
參數(shù)資料
| 型號： | AM49LV128BMAH15NT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA64 |
| 封裝： | 12 X 9 MM, FBGA-64 |
| 文件頁數(shù)： | 97/98頁 |
| 文件大小： | 1016K |
| 代理商： | AM49LV128BMAH15NT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁當(dāng)前第97頁第98頁
June 17, 2004
Am49LV128BM
95
REVISION SUMMARY
Revision A (January 22, 2004)
Initial release.
Revision A+1 (January 29, 2004)
Connection Diagrams
Corrected signal designation on ball H8.
AC Characteristics (Flash)
Read-only Operations:
Added Figure 14.
pSRAM AC Characteristics
Figure 32, Write Timing #1 (Basic Timing):
Renamed
t
WRC
to t
AH
; extended t
WR
to where WE# returns low;
extended t
BR
to where LB#, UB# goes low.
Figure 33, Write Timing #2 (WE# Control):
The period
along WE# formerly labeled t
WR
is now t
AH
. A new t
WR
period has been added which extends from WE#
going high after the first t
WP
period to where the sec-
ond t
WP
period begins.
Figure 34, Write Timing #3-1 (WE#/LB#/UB# Byte
Write Control):
t
WR
has been extended to where WE#
returns low.
Figure 35, Write Timing #3-2 (WE#/LB#/UB# Byte
Write Control):
t
WR
has been extended to where WE#
returns low.
Write Operations table:
Changed minimum specifica-
tion for t
WR
from 12 to 7.5 ns. Added t
AH
specification.
Revision A+2 (February 16, 2004)
PSRAM Features
Feature list was corrected to four main features
Lookahead Pinout Diagram
Figure was removed and replaced by TBD.
Ordering Information
Added and option that designates standard or second
supplier for PSRAM.
AM49LV128BM MCP with Second Supplier
Section added.
Revision A+3 (February 25, 2004)
Operating Ranges
Removed V
IO
from the list of supply voltages.
AM49LVxxxBM MCP with Second Supplier PSRAM
Block Diagram
Added a note clarifying ZZ#.
Revision A+4 (March 4, 2004)
Lookahead Diagram
Added the lookahead diagram.
Revision A+5 (March 15, 2004)
Global
Changed DQ designations to 0-7 and 8-15.
Global
Removed references to the 4M Partial power down
mode and added references to Deep Sleep.
Recommended Operating Conditions
Corrected Min. and Max values for V
IH
parameter.
PSRAM AC Characteristics
Write Operation
Changed column head to Value, added t
WHOL
param-
eter, changed min value of t
BWO
to 30, and added
Notes 8, 9, and 10.
AC Characteristics
Added Power Down Parameters and Other Timing Pa-
rameters tables.
AM49LV128BM MCP with Second PSRAM Supplier
Removed Capacitance section.
Partial Array Refresh (PAR)
Removed reference to two versions.
Revision A6 (June 17, 2004)
“Absolute Maximum Ratings” on page 37
Changed “Voltage on VCC Supply relative to VSS -
Rating” To -0.2 to 3.6.
Changed “Power Dissipation - Rating” to 1.
Changed “Operating Temperature - Rating” to -25 to
+85.
“Low Power ICC Characteristics for PSRAM” on
page 93
Changed “PAR Mode Standby Current” - Type to “50”
and Max to “75”.
Changed “RMS Mode Standby Current - 8Mb Device”
- Type to “50” and Max to “75”.
Changed “RMS Mode Standby Current - 16Mb De-
vice” - Type to “70” and Max to “90”.
Changed “Deep Sleep Current” -Type to “7”.
“Address Patterns for RMS (A3 = 1, A4 = 1)” on
page 92
Deleted “Three-quarters of die from table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM49LV128BMAL11NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL11NT | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NT | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMH11NS | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49LV128BMAL11NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL11NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMAL15NT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| AM49LV128BMH11NS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。