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| 型號： | AM49DL640BG25IT |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | 堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 37/65頁 |
| 文件大?。?/td> | 1005K |
| 代理商： | AM49DL640BG25IT |
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36
Am49DL640AG
April 1, 2003
P R E L I M I N A R Y
Notes:
1.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
RESET# Input Load Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LIA
ACC Input Leakage Current
V
CC
= V
CC max
, WP#/ACC
= V
ACC max
35
μA
I
CC1
f
Flash V
Active Read Current
(Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE#f = V
,
OE# =
V
IH
,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2
f
Flash V
CC
Active Write Current (Notes 2, 3) CE#f = V
IL
,
OE# =
V
IH
, WE# = V
IL
15
30
mA
I
CC3
f
Flash V
CC
Standby Current (Note 2)
V
f = V
, CE#f, RESET#,
WP#/ACC = V
CC
f
±
0.3 V
V
f = V
, RESET# = V
SS
±
0.3 V,
WP#/ACC = V
CC
f
±
0.3 V
V
CC
f = V
CC max
, V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
0.2
5
μA
I
CC4
f
Flash V
CC
Reset Current (Note 2)
0.2
5
μA
I
CC5
f
Flash V
Current Automatic Sleep Mode
(Notes 2, 4)
0.2
5
μA
I
CC6
f
Flash V
Active Read-While-Program
Current (Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC7
f
Flash V
Active Read-While-Erase
Current (Notes 1, 2)
CE#f = V
IL
, OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC8
f
Flash V
Active
Program-While-Erase-Suspended Current
(Notes 2, 5)
CE#f = V
IL
, OE#f = V
IH
17
35
mA
V
IL
Input Low Voltage
–0.2
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.2
V
V
HH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
f = V
CC
s = V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
f = V
CC
s = V
CC min
0.85 x
V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Flash Low V
CC
Lock-Out Voltage (Note 5)
2.3
2.5
V
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| AM49DL640BG30IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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|---|---|
| AM49DL640BG30IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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| AM49DL640BG40IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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