參數(shù)資料
型號(hào): AM49DL640AG85IS
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲(chǔ)器
英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁數(shù): 55/65頁
文件大?。?/td> 1005K
代理商: AM49DL640AG85IS
54
Am49DL640AG
April 1, 2003
P R E L I M I N A R Y
pSRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
IH
.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than t
RC
for continuous periods < 10 μs.
Figure 30.
pSRAM Read Cycle
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
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AM49DL640AG85IT Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM49DL640AG Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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