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| 型號： | AM49DL322BGB85 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| 中文描述： | 堆疊式多芯片封裝（MCP）閃存和SRAM的32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，同時 |
| 文件頁數(shù)： | 12/64頁 |
| 文件大小： | 570K |
| 代理商： | AM49DL322BGB85 |
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July 19, 2002
Am49DL32xBG
11
P R E L I M I N A R Y
Table 2.
Device Bus Operations
—
Flash Byte Mode, CIOf = V
IL
Legend:
L = Logic Low = V
, H = Logic High = V
, V
= 11.5
–
12.5
V, V
= 9.0 ± 0.5 V, X = Don
’
t Care, SA = pSRAM Address Input, Byte Mode,
SADD = Flash Sector Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1.
Other operations except for those indicated in this column are
inhibited.
Do not apply CE#f = V
IL
, CE1#s = V
IL
and CE2s = V
IH
at the same
time.
Don
’
t care or open LB#s or UB#s.
If WP#/ACC = V
, the boot sectors will be protected. If WP#/ACC
= V
the boot sectors protection will be removed.
If WP#/ACC = V
ACC
(9V), the program time will be reduced by
40%.
2.
3.
4.
5.
The sector protect and sector unprotect functions may also be
implemented via programming equipment. See the
“
Autoselect
Mode
”
section.
If WP#/ACC = V
, the two outermost boot sectors remain
protected. If WP#/ACC = V
, the two outermost boot sector
protection depends on whether they were last protected or
unprotected using the method described in
“
Autoselect Mode
”
. If
WP#/ACC = V
HH,
all sectors will be unprotected.
Data will be retained in pSRAM.
6.
7.
8.
Data will be lost in pSRAM.
Operation
(Notes 1, 2)
CE#f
CE1#s
CE2s
OE#
WE#
Address
LB#s
UB#s RESET#
WP#/ACC
(Note 4)
DQ7
–
DQ0
DQ15
–
DQ8
Read from
Flash
(Note 7)
L
H
H
L
H
A
IN
X
X
H
L/H
D
OUT
High-Z
(Note 8)
H
L
Write to Flash
(Note 7)
L
H
H
H
L
A
IN
X
X
H
(Note 4)
D
IN
High-Z
(Note 8)
H
L
Standby
V
CC
±
0.3 V
H
H
X
X
X
X
X
V
CC
±
0.3 V
H
High-Z
High-Z
Deep Power-down
Standby
V
CC
±
0.3 V
H
L
X
X
X
X
X
V
CC
±
0.3 V
H
High-Z
High-Z
Output Disable
L
L
H
H
H
X
X
X
H
L/H
High-Z
High-Z
H
H
X
X
X
Flash Hardware
Reset
(Note 7)
X
H
H
X
X
X
X
X
L
L/H
High-Z
High-Z
(Note 8)
H
L
Sector Protect
(Note 5)
(Note 7)
L
H
H
H
L
SADD, A6 = L,
A1 = H, A0 = L
X
X
V
ID
L/H
D
IN
X
(Note 8)
H
L
Sector
Unprotect
(Note 5)
(Note 7)
L
H
H
H
L
SADD, A6 = H,
A1 = H, A0 = L
X
X
V
ID
(Note 6)
D
IN
X
(Note 8)
H
L
Temporary
Sector
Unprotect
(Note 7)
X
H
H
X
X
X
X
X
V
ID
(Note 6)
D
IN
High-Z
(Note 8)
H
L
Read from pSRAM
H
L
H
L
H
A
IN
L
L
H
X
D
OUT
D
OUT
H
L
High-Z
D
OUT
L
H
D
OUT
High-Z
Write to pSRAM
H
L
H
X
L
A
IN
L
L
H
X
D
IN
D
IN
H
L
High-Z
D
IN
L
H
D
IN
High-Z
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|---|---|
| AM49DL322BGT70 | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| AM49DL322BGT85 | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM49DL322BGB85S | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
| AM49DL322BGB85T | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
| AM49DL322BGT70 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous |
| AM49DL322BGT70S | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
| AM49DL322BGT70T | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) |
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