參數(shù)資料
型號: AM42DL3244GT30IT
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),3.0伏的CMOS只,同時(shí)作業(yè)閃存和4兆位(256畝× 16位),靜態(tài)存儲器
文件頁數(shù): 1/64頁
文件大小: 557K
代理商: AM42DL3244GT30IT
PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
25822
Issue Date:
May 19, 2003
Rev:
B
Amendment/
0
Am42DL32x4G
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash
Memory and 4 Mbit (256 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Power supply voltage of 2.7 to 3.3 volt
High performance
— Flash Access time as fast as 70 ns
— SRAM access time as fast as 55 ns
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
Secured Silicon (SecSi) Sector: Extra 256 Byte sector
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function.
Customer lockable:
Sector is one-time programmable. Once
locked, data cannot be changed
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
Top or bottom boot block
Manufactured on 0.17 μm process technology
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast as 70 ns
— Program time: 4 μs/word typical utilizing Accelerate function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per sector
20 Year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming and
erasing, enabling EEPROM emulation
— Eases sector erase limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in same
bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
reading array data
WP#/ACC input pin
— Write protect (WP#) function allows protection of two outermost
boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
SRAM Features
Power dissipation
— Operating: 22 mA maximum for 70 ns, 30 mA maximum for
55 ns
— Standby: 10 μA maximum
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 1.5 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
相關(guān)PDF資料
PDF描述
AM42DL3244GT35IT 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT40IT 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT55IT 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT70IT 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT71IT 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM42DL3244GT35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT40IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT55IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT70IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
AM42DL3244GT71IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM