參數(shù)資料
型號(hào): AM42DL3224GT40IT
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),3.0伏的CMOS只,同時(shí)作業(yè)閃存和4兆位(256畝× 16位),靜態(tài)存儲(chǔ)器
文件頁數(shù): 39/64頁
文件大?。?/td> 557K
代理商: AM42DL3224GT40IT
May 19, 2003
Am42DL32x4G
39
P R E L I M I N A R Y
Notes:
1. Undershoot: –1.0V if pulse width
20 ns.
2. Overshoot: V
CC
+1.0V if pulse width
20 ns.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
–1.0
1.0
μA
I
CC
Operating Power Supply Current
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
55
5
mA
70
3
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
= 0 mA, CE1#s
0.2 V,
CE2
V
CC
– 0.2 V, V
IN
0.2 V or
V
IN
V
CC
– 0.2 V
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
55
30
mA
70
22
I
CC2
s
Average Operating Current
55
5
mA
70
3
V
IL
Input Low Voltage
0.2
(Note 1)
0.4
V
V
IH
Input High Voltage
2.2
V
CC
+0.2
(Note 2)
V
V
OL
V
OH
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= –1.0 mA
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
V
– 0.2 V, CE2
V
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
0.4
V
Output High Voltage
2.4
V
I
SB
Standby Current (TTL)
0.3
mA
I
SB1
Standby Current (CMOS)
10
μA
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