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| 型號(hào)： | AM42DL1622DB30IS |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| 中文描述： | Am29DL16xD 16兆位（2米× 8位/ 1個(gè)M x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體和2兆位（128畝× 16位），靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 4/128頁(yè) |
| 文件大?。?/td> | 650K |
| 代理商： | AM42DL1622DB30IS |
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2
Am42DL16x2D
February 6, 2004
GENERAL DESCRIPTION
Am29DL16xD Features
The Am29DL16xD family is a 16 megabit, 3.0 volt-only
flash memory device, organized as 1,048,576 words of
16 bits or 2,097,152 bytes of 8 bits each. Word mode
data appears on DQ15–DQ0; byte mode data ap-
pears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt V
CC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with access times of 70 ns or
85 ns. The device is offered in a 69-ball FBGA pack-
age. Standard control pins—chip enable (CE#f), write
enable (WE#), and output enable (OE#)—control nor-
mal read and write operations, and avoid bus
contention issues.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation
by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to pro-
gram or erase in one bank, then immediately and
simultaneously read from the other bank, with zero la-
tency. This releases the system from waiting for the
completion of program or erase operations.
The Am29DL16xD devices uses multiple bank archi-
tectures to provide flexibility for different applications.
Four devices are available with the following bank
sizes:
The
Secured Silicon (SecSi) Sector
is an extra 64
Kbit sector capable of being permanently locked by
AMD or customers. The
SecSi Sector Indicator Bit
(DQ7) is permanently set to a 1 if the part is
factory
locked
, and set to a 0 if
customer lockable
. This way,
customer lockable parts can never be used to replace
a factory locked part.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number). Customer Lockable
parts may utilize the SecSi Sector as bonus space,
reading and writing like any other flash sector, or may
permanently lock their own code there.
DMS (Data Management Software)
allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is an advantage compared to systems where
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and
software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard
. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device
sta-
tus bits:
RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via
programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode
.
The system can also place the device into the
standby mode
. Power consumption is greatly re-
duced in both modes.
Device
DL161
DL162
DL163
DL164
Bank 1
0.5 Mb
2 Mb
4 Mb
8 Mb
Bank 2
15.5 Mb
14 Mb
12 Mb
8 Mb
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM42DL1622DB30IT | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB35IS | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB35IT | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB45IS | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB45IT | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM42DL1622DB30IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB35IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB45IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1622DB45IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
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