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參數(shù)資料
| 型號： | AM42DL1614DB35IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| 中文描述： | Am29DL16xD 16兆位（2米× 8位/ 1個M x 16位），3.0伏的CMOS只，同時作業(yè)閃存和4兆位（256畝× 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 58/61頁 |
| 文件大?。?/td> | 477K |
| 代理商： | AM42DL1614DB35IT |
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January 9, 2002
Am42DL16x4D
57
P R E L I M I N A R Y
FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most byteswords
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytewords are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Note:
7.Test conditions T
A
= 25
°
C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
27
sec
Byte Program Time
5
150
μs
Word Program Time
7
210
μs
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
4
120
μs
Byte Mode
9
27
Chip Program Time
(Note 3)
Word Mode
6
18
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including OE# and RESET#)
–
1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–
1.0 V
V
CC
+ 1.0 V
V
CC
Current
–
100 mA
+100 mA
Parameter
Symbol
Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
11
14
pF
C
OUT
Output Capacitance
V
OUT
= 0
12
16
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
14
16
pF
C
IN3
WP#/ACC Pin Capacitance
V
IN
= 0
17
20
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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| AM42DL1614DB45IT | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL1614DB70IT | Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM42DL1614DB45IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL1614DB70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL1614DB85IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL1614DT30IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
| AM42DL1614DT35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM |
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