參數(shù)資料
型號： AM42BDS640AGBD9IS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 8 X 11.60 MM, FBGA-93
文件頁數(shù)： 10/72頁
文件大?。?/td> 1060K
代理商： AM42BDS640AGBD9IS
November 1, 2002
Am42BDS640AG
17
P R E L I M INARY
Table 4.
System Interface String
Table 5.
Device Geometry Definition
19h
1Ah
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
Data
Description
1Bh
0017h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2
N s
20h
0000h
Typical timeout for Min. size buffer write 2
N s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2
N times typical
24h
0000h
Max. timeout for buffer write 2
N times typical
25h
0004h
Max. timeout per individual block erase 2
N times typical
26h
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
Addresses
Data
Description
27h
0017h
Device Size = 2
N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0003h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
0003h
0000h
0040h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
相關(guān)PDF資料
PDF描述
AM42BDS640AGBD9IT Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM42BDS640AGBD9IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM42BDS640AGTC8IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC8IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC9IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTC9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
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