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參數(shù)資料
| 型號： | AM41PDS3224DB110IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只，同時操作，頁面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 11/59頁 |
| 文件大?。?/td> | 560K |
| 代理商： | AM41PDS3224DB110IT |
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10
Am41PDS3224D
May 13, 2002
P R E L I M I N A R Y
MCP DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function
of the device. Tables 1–2 list the device bus opera-
tions, the inputs and control levels they require, and
the resulting output. The following subsections de-
scribe each of these operations in further detail.
Table 1.
Device Bus Operations—SRAM Word Mode, CIOs = V
CC
Legend:
L = Logic Low = V
, H = Logic High = V
IH
, V
= 9–11 V, V
HH
= 9.0 ± 0.5 V, X = Don’t Care, SA = SRAM Address Input, Byte Mode,
SADD = Flash Sector Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1.
Other operations except for those indicated in this column are inhibited.
2.
Do not apply CE#f = V
IL
, CE1#s = V
IL
and CE2s = V
IH
at the same time.
3.
Don’t care or open LB#s or UB#s.
4.
If WP#/ACC = V
IL
, the boot sectors will be protected. If WP#/ACC = V
IH
the boot sectors protection will be removed.
If WP#/ACC = V
ACC
(9V), the program time will be reduced by 40%.
5.
The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection
and Unprotection” section.
6.
If WP#/ACC = V
IL
, the two outermost boot sectors remain protected. If WP#/ACC = V
IH
, the two outermost boot sector protection depends
on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If
WP#/ACC = V
HH,
all sectors will be unprotected.
Operation
(Notes 1, 2)
CE#f
CE1#s
CE2s
OE# WE#
SA
Addr.
LB#s
(Note 3)
UB#s
(Note 3)
RESET#
WP#/ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
Read from Flash
L
H
X
L
H
X
A
IN
X
X
H
L/H
D
OUT
D
OUT
X
L
Write to Flash
L
H
X
H
L
X
A
IN
X
X
H
(Note 4)
D
IN
D
IN
X
L
Standby
V
±
0.3 V
H
X
X
X
X
X
X
X
V
±
0.3 V
H
High-Z
High-Z
X
L
Output Disable
L
L
H
H
H
X
X
L
X
H
L/H
High-Z
High-Z
H
H
X
X
X
L
Flash Hardware
Reset
X
H
X
X
X
X
X
X
X
L
L/H
High-Z
High-Z
X
L
Sector Protect
(Note 5)
L
H
X
H
L
X
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
V
ID
L/H
D
IN
X
X
L
Sector Unprotect
(Note 5)
L
H
X
H
L
X
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
V
ID
(Note 6)
D
IN
X
X
L
Temporary Sector
Unprotect
X
H
X
X
X
X
X
X
X
V
ID
(Note 6)
D
IN
High-Z
X
L
Read from SRAM
H
L
H
L
H
X
A
IN
L
L
H
X
D
OUT
High-Z
D
OUT
D
OUT
High-Z
H
L
L
H
D
OUT
D
IN
High-Z
Write to SRAM
H
L
H
X
L
X
A
IN
L
L
H
L/H
D
IN
D
IN
H
L
L
H
D
IN
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41PDS3224DB11IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB11IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB35IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB35IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB40IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41PDS3224DB11IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB11IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB35IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB40IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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