參數(shù)資料
型號(hào): AM41DL3248GT45IT
廠(chǎng)商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),3.0伏的CMOS只,同步讀/寫(xiě)閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 41/66頁(yè)
文件大小: 581K
代理商: AM41DL3248GT45IT
40
Am41DL32x8G
September 5, 2002
P R E L I M I N A R Y
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
0.2 V,
CE2
V
CC
0.2 V, V
IN
0.2 V or
V
IN
V
CC
0.2 V
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
I
OL
= 2.1 mA
I
OH
=
1.0 mA
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
V
CC
0.2 V, CE2
V
CC
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
1.0
1.0
μA
I
LO
Output Leakage Current
1.0
1.0
μA
I
CC
Operating Power Supply Current
3
mA
I
CC1
s
Average Operating Current
3
mA
I
CC2
s
Average Operating Current
30
mA
V
OL
V
OH
Output Low Voltage
0.4
V
Output High Voltage
2.4
V
I
SB
Standby Current (TTL)
0.3
mA
I
SB1
Standby Current (CMOS)
15
μA
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