參數(shù)資料
型號: AM41DL3248GT45IS
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 32兆位(4個(gè)M × 8位/ 2米x 16位),3.0伏的CMOS只,同步讀/寫閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲(chǔ)器
文件頁數(shù): 5/66頁
文件大?。?/td> 581K
代理商: AM41DL3248GT45IS
4
Am41DL32x8G
September 5, 2002
P R E L I M I N A R Y
Figure 21. Back-to-back Read/Write Cycle Timngs....................... 50
Figure 22. Data#Polling Timngs (During Embedded Algorithms).. 50
Figure 23. Toggle Bit Timngs (During Embedded Algorithms)....... 51
Figure 24. DQ2 vs. DQ6.................................................................. 51
Temporary Sector/Sector Block Unprotect .............................52
Figure 25. Temporary Sector/Sector Block Unprotect
Timng Diagram............................................................................... 52
Figure 26. Sector/Sector Block Protect and Unprotect
Timng Diagram............................................................................... 53
Alternate CE#f Controlled Erase and ProgramOperations ....54
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program Op-
eration Timngs................................................................................ 55
SRAMRead Cycle ..................................................................56
Figure 28. SRAM Read Cycle
Address Controlled....................... 56
Figure 29. SRAM Read Cycle......................................................... 57
SRAMWrite Cycle ..................................................................58
Figure 30. SRAM Write Cycle
WE#Control................................ 58
Figure 31. SRAM Write Cycle
CE1#s Control............................. 59
Figure 32. SRAM Write Cycle
UB#s and LB#s Control............... 60
Flash Erase And Programmng Performance ........................61
Flash Latchup Characteristics. . . . . . . . . . . . . . . 61
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 61
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 61
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 62
Figure 33. CE1#s Controlled Data Retention Mode....................... 62
Figure 34. CE2s Controlled Data Retention Mode......................... 62
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 63
FLB073
73-Ball Fine-Pitch Grid Array 8 x 11.6 mm.............63
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64
Revision A (October 25, 2001) ...............................................64
Revision A+1 (September 5, 2002) ........................................64
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參數(shù)描述
AM41DL3248GT45IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3248GT70IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3248GT70IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3248GT85IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
AM41DL3248GT85IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM