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參數(shù)資料
| 型號： | AM41DL3248GT40IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，同步讀/寫閃存和8兆位（1 M中的x 8-Bit/512畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 2/66頁 |
| 文件大小： | 581K |
| 代理商： | AM41DL3248GT40IT |
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PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
25558
Issue Date:
September 5, 2002
Rev:
A
Amendment/
+1
Am41DL32x8G
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash
Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Power supply voltage of 2.7 to 3.3 volt
I
I
High performance
— Access time as fast as 70 ns
Package
— 73-Ball FBGA
I
I
Operating Temperature
— –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
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I
Secured Silicon (SecSi) Sector: Extra 256 Byte sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function.
—
Customer lockable:
Sector is one-time programmable. Once
locked, data cannot be changed
I
Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
I
Top or bottom boot block
I
Manufactured on 0.17 μm process technology
I
Compatible with JEDEC standards
—
Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
High performance
—
Access time as fast as 70 ns
—
Program time: 4 μs/word typical utilizing Accelerate function
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Ultra low power consumption (typical values)
—
2 mA active read current at 1 MHz
—
10 mA active read current at 5 MHz
—
200 nA in standby or automatic sleep mode
I
Minimum 1 million write cycles guaranteed per sector
20 Year data retention at 125
°
C
—
Reliable operation for the life of the system
I
SOFTWARE FEATURES
Data Management Software (DMS)
—
AMD-supplied software manages data programming and
erasing, enabling EEPROM emulation
—
Eases sector erase limitations
I
I
Supports Common Flash Memory Interface (CFI)
I
Erase Suspend/Erase Resume
—
Suspends erase operations to allow programming in same
bank
I
Data# Polling and Toggle Bits
—
Provides a software method of detecting the status of
program or erase cycles
I
Unlock Bypass Program command
—
Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
I
I
Ready/Busy# output (RY/BY#)
—
Hardware method for detecting program or erase cycle
completion
I
Hardware reset pin (RESET#)
—
Hardware method of resetting the internal state machine to
reading array data
I
WP#/ACC input pin
—
Write protect (WP#) function allows protection of two outermost
boot sectors, regardless of sector protect status
—
Acceleration (ACC) function accelerates program timing
I
Sector protection
—
Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
—
Temporary Sector Unprotect allows changing data in
protected sectors in-system
SRAM Features
Power dissipation
—
Operating: 30 mA maximum
—
Standby: 15 μA maximum
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CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 1.5 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41DL3248GT45IS | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT45IT | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT70IS | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT70IT | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT85IS | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41DL3248GT45IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT45IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT70IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL3248GT85IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
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