參數(shù)資料
型號： AM41DL3208GB45IT
廠商： Spansion Inc.
英文描述： LJT 41C 41#20 PIN WALL RECP
中文描述： 堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 63/65頁
文件大小： 1288K
代理商： AM41DL3208GB45IT
62
Am41DL3208G
February 13, 2002
P R E L I M I N A R Y
SRAM DATA RETENTION
Notes:
1. CE1#s
≥
V
CC
–
0.2 V, CE2s
≥
V
CC
–
0.2 V (CE1#s controlled) or CE2s
≤
0.2 V (CE2s controlled), CIOs = V
SS
or V
CC
.
2. Typical values are not 100% tested.
Figure 33.
CE1#s Controlled Data Retention Mode
Figure 34.
CE2s Controlled Data Retention Mode
Parameter
Symbol
Parameter Description
Test Setup
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
CS1#s
≥
V
CC
–
0.2 V (Note 1)
V
CC
= 3.0 V, CE1#s
≥
V
CC
–
0.2 V
(Note 1)
1.5
3.3
V
I
DR
Data Retention Current
1.0
(Note 2)
15
μA
t
SDR
t
RDR
Data Retention Set-Up Time
See data retention waveforms
0
ns
Recovery Time
t
RC
ns
V
DR
V
CC
2.7V
2.2V
CE1#s
GND
Data Retention Mode
CE1#s
≥
V
CC
-
0.2 V
t
SDR
t
RDR
V
CC
2.7 V
CE2s
0.4 V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CE2s <
0.2 V
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41DL3208GB55IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
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AM41DL3208GB70IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
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