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參數(shù)資料
| 型號： | AM29SL800CT-120WBI |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 23/50頁 |
| 文件大?。?/td> | 979K |
| 代理商： | AM29SL800CT-120WBI |
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Am29SL160C
23
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t cares. The device then returns to reading
array data.
The device offers accelerated program operations
through the WP#/ACC pin. This function is intended
only to speed in-system programming of the device
during system production. When the system asserts
V
HH
on the WP#/ACC pin, the device automatically
enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that the
WP#/ACC pin must not be at V
HH
for any operation
other than accelerated programming, or device
damage may result. In addition, the WP#/ACC pin must
not be left floating or unconnected; inconsistent
behavior of the device may result.
Figure 3 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See Table 12 for program command sequence.
Figure 3.
Program Operation
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| AM29SL800DB120WCI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29SL800DB90WAD | 制造商:Spansion 功能描述: |
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| AM2A026 | 制造商:MAG-LITE 功能描述:Bulk |
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