參數(shù)資料
型號： AM29SL800CT-120EC
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 49/50頁
文件大小： 979K
代理商： AM29SL800CT-120EC
Am29SL160C
49
REVISION SUMMARY
Revision A (December 1998)
Initial release.
Revision A+1 (January 1999)
Distinctive Characteristics
WP#/ACC pin:In the third subbullet, deleted reference
to increased erase performance.
Device Bus Operations
Accelerated Program and Erase Operations: Deleted
all references to accelerated erase.
Sector/Sector Block Protection and Unprotection:
Changed section name and text to include tables and
references to sector block protection and unprotection.
AC Characteristics
Accelerated Program Timing Diagram:Deleted refer-
ence in title to accelerated erase.
Revision A+2 (March 23, 1999)
Connection Diagrams
Corrected the TSOP pinout on pins 13 and 14.
Revision A+3 (April 12, 1999)
Global
Modified the description of accelerated programming to
emphasize that it is intended only to speed in-system
programming of the device during the system produc-
tion process.
Distinctive Characteristics
Secured Silicon (SecSi) Sector bullet:Added the 8-byte
unique serial number to description.
Device Bus Operations table
Modified Note 3 to indicate sector protection behavior
when V
IH
is asserted on WP#/ACC. Applied Note 3 to
the WP#/ACC column for write operations.
Ordering Information
Added the “N” designator to the optional processing
section.
Secured Silicon (SecSi) Sector Flash Memory
Region
Modified explanatory text to indicate that devices now
have an 8-byte unique ESN in addition to the 16-byte
random ESN. Added table for address range
clarification.
Revision A+4 (May 14, 1999)
Global
Deleted all references to the unique ESN.
Revision A+5 (July 23, 1999)
Global
Added 90 ns speed option.
Revision A+6 (September 1, 1999)
AC Characteristics
Hardware Reset (RESET#) table:
Deleted t
RPD
specifi-
cation.
Erase/Program Operations table:
Deleted t
OES
specification.
Revision A+7 (September 7, 1999)
Distinctive Characteristics
Ultra low power consumption bullet:
Corrected values
to match those in the DC Characteristics table.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Deleted t
OES
specification.
Revision B (December 14, 1999)
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C (February 21, 2000)
Removed “Advance Information” designation from data
sheet. Data sheet parameters are now stable; only
speed, package, and temperature range combinations
are expected to change in future revisions.
Device Bus Operations table
Changed standby voltage specification to V
CC
± 0.2 V.
Standby Mode
Changed standby voltage specification to V
CC
± 0.2 V.
DC Characteristics table
Changed test conditions for I
CC3
, I
CC4
, I
CC5
to V
CC
± 0.2
V.
Revision C+1 (November 14, 2000)
Global
Added dash to speed options and OPNs. Added table
of contents.
AC Characteristics—Read Operations
Changed t
DF
to 16 ns for all speeds.
相關(guān)PDF資料
PDF描述
AM29SL800CT-120EI x8/x16 Flash EEPROM
AM29SL800CT-120FC 10MS, DIE 5V, 11 MILS THICKNESS(SERIAL EE)
AM29SL800CT-120FI 10MS, 8 PDIP, IND TEMP, 1.8V(SERIAL EE)
AM29SL800CT-120WBC x8/x16 Flash EEPROM
AM29SL800CT-120WBI x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29SL800DB120WCI 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays
AM29SL800DB90WAD 制造商:Spansion 功能描述:
AM29X305ADC 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP
AM2A016 制造商:MAG-LITE 功能描述:Bulk
AM2A026 制造商:MAG-LITE 功能描述:Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*