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參數(shù)資料
| 型號(hào)： | AM29PDL127H30PCI |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，頁(yè)面模式同步讀/寫(xiě)閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 52/68頁(yè) |
| 文件大小： | 750K |
| 代理商： | AM29PDL127H30PCI |
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54
Am29PDL127H
June 30, 2003
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
OE#
CE#
Addresses
VCC
WE#
Data
2AAh
SA
tAH
tWP
tWC
tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
Status
DOUT
tWHWH2
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
tRB
tBUSY
Note:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.)
Figure 17.
Chip/Sector Erase Operation Timings
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| AM29PDL127H30PCIN | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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| AM29PDL127H53VKI | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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