參數(shù)資料
型號(hào): AM29LV800BT-120DTC2
英文描述: 10MHZ, 20 SOIC, IND TEMP(FPGA)
中文描述: EEPROM的
文件頁(yè)數(shù): 30/35頁(yè)
文件大小: 744K
代理商: AM29LV800BT-120DTC2
30
Am29LV040B
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, DQ7# = complement of the data written to the device, D
OUT
is the data written
to the device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV800BT-120DTI2 65K CONFIG MEM, 20 PLCC, IND TEMP(FPGA)
AM29LV800BT-120DWC2 10MHZ, 8 LAP, 5K MOQ(FPGA)
AM29LV800BT-120DWI2 10MHZ, 8 LAP, 5K MOQ(FPGA)
AM29LV800BT-120EC 10MHZ, 44 TQFP, 5K MOQ(FPGA)
AM29LV800BT-120EE x8/x16 Flash EEPROM
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