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參數(shù)資料
| 型號： | AM29LV800 |
| 英文描述： | Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory |
| 中文描述： | Am29LV800 - 8兆（1.048.576 x 8-Bit/524.288 x 16位），3.0伏的CMOS只。扇區(qū)閃存 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大?。?/td> | 744K |
| 代理商： | AM29LV800 |
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14
Am29LV040B
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 4 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV800BB-70FI | 32M CONFIG FLASH, 44 PLCC, GREEN(FPGA) |
| AM29LV800BB-70REC | 10 MHZ, 8 LAP, COM TEMP(FPGA) |
| AM29LV800BB-70RFC | 10 MHZ, 20 PLCC, IND TEMP(FPGA) |
| AM29LV800BB-70RFI | 10 MHZ, 20 SOIC, COM TEMP(FPGA) |
| AM29LV800BB-70RSC | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
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