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參數(shù)資料
| 型號： | AM29LV64MU120RWHI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with |
| 中文描述： | 64兆位（4個M x 16位）的MirrorBit 3.0伏特，只有統(tǒng)一的閃存部門 |
| 文件頁數(shù)： | 50/58頁 |
| 文件大小： | 1173K |
| 代理商： | AM29LV64MU120RWHI |
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June 12, 2003
Am29LV640MU
49
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
6. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Notes 2, 3)
Typ
352
μs
Effective Write Buffer Program Operation,
Per Word (Notes 2, 4)
Typ
22
μs
Accelerated Effective Write Buffer Program
Operation, Per Word (Notes 2, 4)
Typ
17.6
μs
Single Word Program (Note 2, 5)
Typ
100
μs
Accelerated Single Word Programming
Operation (Note 2, 5)
Typ
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET # High Time Before Write (Note 1)
Min
50
ns
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