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| 型號(hào)： | Am29LV641DU90RZE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁(yè)數(shù)： | 25/57頁(yè) |
| 文件大?。?/td> | 1467K |
| 代理商： | AM29LV641DU90RZE |
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24
Am29LV640D/Am29LV641D
September 20, 2002
Table 9.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 10 defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
resets
the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
Addresses (x16)
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string
“
PRI
”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0000h
Address Sensitive Unlock (Bits 1-0)
00b = Required, 01b = Not Required
Silicon Revision Number (Bits 7-2) 000000b = 0.23 μm Process Technology
46h
0002h
Erase Suspend
00 = Not Supported, 01 = To Read Only, 02 = To Read & Write
47h
0004h
Sector Protect
00 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800A mode
4Ah
0000h
Simultaneous Operation
00 = Not Supported, XX = Number of Sectors in Bank
4Bh
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
00B5h
ACC (Acceleration) Supply Minimum
Bits 7
–
4 = Hex Value in Volts, Bits 0
–
3 = BCD Value in 100 mV
4Eh
00C5h
ACC (Acceleration) Supply Maximum
Bits 7
–
4 = Hex Value in Volts, Bits 0
–
3 = BCD Value in 100 mV
4Fh
000Xh
Top/Bottom Boot Sector Flag
00h = Uniform Sector, No WP# Control
04h = Uniform Sector, WP# Protects Bottom Sector
05h = Uniform Sector, WP# Protects Top Sector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV640DH120RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| Am29LV641DH101REE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DH101REEN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV641DH101REI | RF/Coaxial Connector; RF Coax Type:BNC; Impedance:75ohm; Body Style:Right Angle Jack; Body Material:White Valox; Contact Material:Phosphor Bronze; Mounting Type:PC Board RoHS Compliant: Yes |
| AM29LV641DH101REIN | RF/Coaxial Connector; RF Coax Type:BNC; Impedance:50ohm; Body Style:Dual Right Angle Jack; Body Material:Metal; Contact Material:Phosphor Bronze; Mounting Type:PC Board RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV641ML112REI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV641ML120REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 120ns 48-Pin TSOP |
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
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