| 型號: | Am29LV641DU120RZEN |
| 廠商: | Advanced Micro Devices, Inc. |
| 英文描述: | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述: | 64兆位(4個M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁數(shù): | 7/57頁 |
| 文件大?。?/td> | 1467K |
| 代理商: | AM29LV641DU120RZEN |

相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV640DH120RPCEN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DH120RPCI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DL120RPCE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DL120RPCI | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 300pF; Working Voltage (Vdc)[max]: 200V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
| Am29LV640DL120RWHI | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 33pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-2%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV641ML112REI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV641ML120REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 120ns 48-Pin TSOP |
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |