參數(shù)資料
型號: Am29LV641DU120RZE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 64兆位(4個M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 46/57頁
文件大?。?/td> 1467K
代理商: AM29LV641DU120RZE
September 20, 2002
Am29LV640D/Am29LV641D
45
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
t
RRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Group Unprotect
Min
4
μs
RESET#
t
VIDR
V
ID
V
SS
, V
IL
,
or V
IH
V
ID
V
SS
, V
IL
,
or V
IH
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
t
RRB
Figure 21.
Temporary Sector Group Unprotect Timing Diagram
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Am29LV641DL101REE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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