參數(shù)資料
型號(hào): AM29LV641DL121RFE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: REVERSE, TSOP-48
文件頁(yè)數(shù): 38/57頁(yè)
文件大?。?/td> 1467K
代理商: AM29LV641DL121RFE
September 20, 2002
Am29LV640D/Am29LV641D
37
TEST CONDITIONS
Table 12.
Test Specifications
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
90R,
101R
120R,
121R
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0
3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don
t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 12.
Input Waveforms and
Measurement Levels
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Am29LV640DU121RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU121RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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Am29LV641DL101RFEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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