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參數(shù)資料
| 型號(hào)： | Am29LV641DL120RZIN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁(yè)數(shù)： | 57/57頁(yè) |
| 文件大?。?/td> | 1467K |
| 代理商： | AM29LV641DL120RZIN |
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56
Am29LV640D/Am29LV641D
September 20, 2002
Test Conditions
Test Conditions table:
Redefined output timing mea-
surement reference level as 0.5 V
IO
.
Added note to table and figure.
Erase and Program Opeations table, Alternate CE#
Controlled Erase and Program Operations table,
Erase and Programming Performance table
Changed the typical sector erase time to 1.6 s.
AC Characteristics
—
Figure 15. Program
Operations Timing and Figure 17. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision B+1 (August 4, 2000)
Global
Added trademarks for SecSi Sector.
Accelerated Program Operation (page 12), Unlock
Bypass Command Sequence (page 26)
Added caution note regarding ACC pin.
Absolute Maximum Ratings
Corrected the maximum voltage on V
IO
to +5.5V.
DC Characteristics table
Added WP# = V
IH
to test conditions for standby cur-
rents I
CC3
, I
CC4
, I
CC5
.
Revision B+2 (October 18, 2000)
Distinctive Characteristics
Corrected package options for 56-pin SSOP as being
available on Am29LV640DH/DL only.
Revision B+3 (January 18, 2001)
Global
Deleted
“
Preliminary
”
status from document.
General Description
In the second paragraph, corrected references to V
IO
voltage ranges. The 90 and 120 speeds are available
where V
IO
≥
V
CC
, and 100 and 120 ns speeds are avail-
able where V
IO
< V
CC
.
Revision B+4 (March 8, 2001)
Table 4, Sector Group Protection/Unprotection
Address Table
Corrected the sector group address bits for sectors
64
–
127.
Revision B+5 (October 11, 2001)
Connection Diagrams, Ordering Information,
Physical Dimensions
Added 64-ball Fortified BGA package information.
Revision B+6 (January 10, 2002)
Global
Clarified description of VersatileIO (V
IO
) in the follow-
ing sections: Distinctive Characteristics; General De-
scription; VersatileIO (V
IO
) Control; Operating Ranges;
DC Characteristics; CMOS compatible.
Reduced typical sector erase time from 1.6 s to 0.9 s.
DC Characteristics
Changed minimum V
OH1
from 0.85V
IO
to 0.8V
IO
. De-
leted reference to Note 6 for both V
OH1
and V
OH2
.
Erase and Program Performance table
Reduced typical sector erase time from 1.6 s to 0.9 s.
Changed typical chip program time from 90 s to 115 s.
Revision B+7 (April 15, 2002)
Ordering Information
Added N designator for Fortified BGA package mark-
ings.
Common Flash Interface (CFI)
Revised data value at address 44h. Clarified descrip-
tion of data for addresses 45
–
47h, 49, 4A, 4D
–
4Fh.
Table 10, Command Definitions
Clarified and combined Notes 4 and 5 into Note 4.
Revision B+8 (September 20, 2002)
Sector Erase Command Sequence
Changed sentence arrangement in fourth paragraph.
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| Am29LV640DU120RZIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RZIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV640DH121RZIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DH121RZIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV640DL121RZIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
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