參數(shù)資料
型號: Am29LV641DH121RZIN
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 64兆位(4個M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 49/57頁
文件大?。?/td> 1467K
代理商: AM29LV641DH121RZIN
48
Am29LV640D/Am29LV641D
September 20, 2002
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 23.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
相關PDF資料
PDF描述
AM29LV640DL121RZIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DL121RZIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU121RZIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU121RZIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DH101REE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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