參數(shù)資料
型號(hào)： AM29LV640MU25PCI
廠商： Advanced Micro Devices, Inc.
元件分類： FLASH
英文描述： 64 Megabit (4 M x 16-Bit) MirrorBita?? 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/Oa?? Control
中文描述： 64Mb(4個(gè)M x 16位)的MirrorBit，3V，統(tǒng)一扇區(qū)閃存并有Versatile輸入/輸出控制
文件頁(yè)數(shù)： 44/59頁(yè)
文件大小： 699K
代理商： AM29LV640MU25PCI
42
Am29LV640MU
25301C5 February1,2007
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words programmed.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
5. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
6. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation with V
IO
≠
V
CC.
7. When using the program suspend/resume feature, if the suspend command is issued within t
POLL
, t
POLL
must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL
, t
POLL
is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101
112
120
Unit
t
AVAV
t
WC
Write Cycle Time (Note
1
)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
352
μs
Effective Word Program Time, using the Write
Buffer (Notes
2
,
4
)
Typ
22
μs
Effective Accelerated Word Program Time, using
the Write Buffer (Notes
2
,
4
)
Typ
17.6
μs
Single Word Program Operation (Note
2
,
5
)
Typ
100
μs
Accelerated Single Word Programming
Operation (Note
2
,
5
)
Typ
90
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note
2
)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note
1
)
Min
250
ns
t
VCS
V
CC
Setup Time (Note
1
)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
WE# High to RY/BY# Low
Max
90
100
110
120
ns
t
POLL
Program Valid Before Status Polling (Note
7
)
Max
4
μs
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