參數(shù)資料
型號： AM29LV640MT90RWHF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述： 64兆位（4個M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 32/66頁
文件大?。?/td> 836K
代理商： AM29LV640MT90RWHF
30
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
The write-buffer programming operation can be sus-
pended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
■
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■
Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V
HH
on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system can then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation.
Note that
the
WP#/
ACC pin must not be at V
HH
for operations
other than accelerated programming, or device dam-
age can result. In addition, no external pullup is neces-
sary since the WP#/ACC pin has internal pullup to
V
CC
.
Figure 5
illustrates the algorithm for the program oper-
ation. See the table,
Erase and Program Operations
on page 48
in
AC Characteristics
for parameters, and
Figure 17
for timing diagrams.
相關(guān)PDF資料
PDF描述
AM29LV640MT90RWHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MH120RFI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640MH 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640MH101EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640MH101FI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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