參數(shù)資料
型號： AM29LV640MT100RPCF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述： 64兆位（4個M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導扇區(qū)閃存
文件頁數(shù)： 28/66頁
文件大?。?/td> 836K
代理商： AM29LV640MT100RPCF
26
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
Table 10.
Device Geometry Definition
Addresses
(x16)
Addresses
(x8)
Data
Description
27h
4Eh
0017h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關PDF資料
PDF描述
AM29LV640MT100RPCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100RWHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100RWHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100WHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100WHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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