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| 型號(hào)： | AM29LV640MT100REI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | MO-142B, TSOP-48 |
| 文件頁(yè)數(shù)： | 45/66頁(yè) |
| 文件大小： | 836K |
| 代理商： | AM29LV640MT100REI |
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February1,2007 26190C8
Am29LV640MT/B
43
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
On the WP#/ACC pin only, the maximum input load current when
WP# = V
IL
is ± 5.0 μA.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2.
3.
4.
I
active while Embedded Erase or Embedded Program is in
progress.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns.
Not 100% tested.
5.
6.
7.
Includes RY/BY#
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (
1
)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; RESET= 12.5 V
±
1.0
μA
I
LIT
A9, ACC Input Load Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
LR
Reset Leakage Current
35
μA
I
CC1
V
CC
Active Read Current
(
2
,
3
)
CE# = V
IL,
OE# = V
IH
,
5 MHz
15
20
mA
1 MHz
15
20
I
CC2
I
CC3
I
CC4
V
CC
Initial Page Read Current (
2
,
3
)
V
CC
Intra-Page Read Current (
2
,
3
)
V
CC
Active Write Current (
3
,
4
)
CE# = V
IL,
OE# = V
IH
CE# = V
IL,
OE# = V
IH
CE# = V
IL,
OE# = V
IH
CE#, RESET# = V
CC
±
0.3 V,
WP# = V
IH
RESET# = V
SS
±
0.3 V, WP# = V
IH
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V, WP# = V
IH
30
50
mA
10
20
mA
50
60
mA
I
CC5
V
CC
Standby Current (
3
)
1
5
μA
I
CC6
V
CC
Reset Current (
3
)
1
5
μA
I
CC7
Automatic Sleep Mode (
3
,
5
)
1
5
μA
V
IL
V
IH
Input Low Voltage
–0.5
0.8
V
Input High Voltage
1.9
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
I
OH
= –2.0 mA, V
CC
= V
CC min
I
OH
= –100 μA, V
CC
= V
CC min
0.15 x V
CC
V
Output High Voltage
0.85 V
CC
V
CC
–0.4
2.3
V
V
Low V
CC
Lock-Out Voltage (
6
)
2.5
V
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PDF描述 |
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| AM29LV640MT120PCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT120REF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT120REI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT120RPCF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT120RPCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29LV640MU101RPCI | 制造商:Advanced Micro Devices 功能描述: |
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| AM29LV640MU90RPC1 | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPCI | 制造商:Advanced Micro Devices 功能描述: |
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