參數(shù)資料
型號: AM29LV640MT100EF
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述: 64兆位(4個M x 16位/八米× 8位)的MirrorBit⑩3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 52/66頁
文件大?。?/td> 836K
代理商: AM29LV640MT100EF
50
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data. See
Write Operation Status on page 38
.
2. These waveforms are for the word mode.
Figure 19.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV640MT100EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100PCF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100PCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100REF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT100REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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