參數(shù)資料
型號(hào)： AM29LV640ML
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 64兆位（4個(gè)M x 16位/八米× 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一閃存部門(mén)與VersatileI /輸出⑩控制
文件頁(yè)數(shù)： 25/62頁(yè)
文件大小： 602K
代理商： AM29LV640ML
December 14, 2005
Am29LV640MH/L
23
D A T A S H E E T
Table 6.
Device Geometry Definition
Addresses
(x16)
27h
28h
29h
2Ah
2Bh
Addresses
(x8)
4Eh
50h
52h
54h
56h
Data
0017h
0002h
0000h
0005h
0000h
Description
Device Size = 2
N
byte
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Ch
58h
0001h
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
007Fh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
AM29LV640ML101EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101FI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101PCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML101RFI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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AM29LV640MU90RPC1 制造商:Advanced Micro Devices 功能描述:
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