參數(shù)資料
型號(hào): AM29LV640ML120FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PDSO56
封裝: REVERSE, MO-142, TSOP-56
文件頁數(shù): 46/62頁
文件大小: 602K
代理商: AM29LV640ML120FI
44
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
Read-Only Operations
Notes:
1.
2.
Not 100% tested.
See Figure 12 and
Table 13
for test specifications.
3.
AC Specifications listed are tested with V
IO
= V
CC
. Contact AMD for
information on AC operation with V
IO
V
CC
.
Figure 14.
Read Operation Timings
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
90R
101,
101R
100
112R
112
120R
120
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
110
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# =
V
IL
OE# = V
IL
Max
90
100
110
120
ns
t
ELQV
t
CE
t
PACC
Page Access Time
t
OE
Output Enable to Output Delay
t
DF
Chip Enable to Output High Z (Note 1)
t
DF
Output Enable to Output High Z (Note 1)
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Chip Enable to Output Delay
Max
90
100
110
120
ns
Max
25
30
30
40
30
40
ns
t
GLQV
t
EHQZ
t
GHQZ
Max
25
30
30
40
30
40
ns
Max
16
ns
Max
16
ns
t
AXQX
t
OH
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Toggle and
Data# Polling
Min
0
ns
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
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