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參數(shù)資料
| 型號： | AM29LV640ML101FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | REVERSE, MO-142B, TSOP-56 |
| 文件頁數(shù)： | 56/62頁 |
| 文件大小： | 602K |
| 代理商： | AM29LV640ML101FI |
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54
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for
more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a
16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a
single word/byte programming operation not utilizing the
write buffer.
6. AC Specifications listed are tested with V
IO
= V
CC
. Contact
AMD for information on AC operation with V
IO
≠
V
CC
.
7. When using the program suspend/resume feature, if the
suspend command is issued within t
POLL
, t
POLL
must be fully
re-applied upon resuming the programming operation. If the
suspend command is issued after t
POLL
, t
POLL
is not
required again prior to reading the status bits upon
resuming.
Parameter
Speed Options
101,
101R
100
0
45
45
0
JEDEC
t
AVAV
t
AVWL
t
ELAX
t
DVEH
t
EHDX
Std.
t
WC
t
AS
t
AH
t
DS
t
DH
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Operation (Notes 2, 4)
90R
90
112,
112R
110
120,
120R
120
Unit
ns
ns
ns
ns
ns
Min
Min
Min
Min
Min
t
GHEL
t
GHEL
Min
0
ns
t
WLEL
t
EHWH
t
ELEH
t
EHEL
t
WS
t
WH
t
CP
t
CPH
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
0
0
45
30
352
11
22
8.8
17.6
100
100
90
ns
ns
ns
ns
μs
μs
μs
μs
μs
μs
μs
μs
t
WHWH1
t
WHWH1
Per Byte
Per Word
Per Byte
Per Word
Byte
Word
Byte
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Single Word/Byte Program
Operation (Note 2, 5)
Single Word/Byte Accelerated
Programming Operation (Note 2,
5)
Sector Erase Operation (Note 7)
RESET# High Time Before Write
Program Valid Before Status Polling (Note 7)
Typ
Typ
Word
90
μs
t
WHWH2
t
WHWH2
t
RH
t
POLL
Typ
Min
Max
0.5
50
4
sec
ns
μs
相關(guān)PDF資料 |
PDF描述 |
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| AM29LV640ML101PCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV640ML101REI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV640ML101RFI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV640ML101RPCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| AM29LV640ML112EI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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