參數(shù)資料
型號(hào): AM29LV640MH
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 64兆位(4個(gè)M x 16位/八米× 8位)的MirrorBit⑩3.0伏特,只有統(tǒng)一閃存部門(mén)與VersatileI /輸出⑩控制
文件頁(yè)數(shù): 45/62頁(yè)
文件大?。?/td> 602K
代理商: AM29LV640MH
December 14, 2005
Am29LV640MH/L
43
D A T A S H E E T
TEST CONDITIONS
KEY TO SWITCHING WAVEFORMS
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 13.
Input Waveforms and
Measurement Levels
Note:
Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Note:
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Table 11.
Test Specifications
Test Condition
Output Load
Output Load Capacitance, C
L
(including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
Input timing measurement
reference levels (See Note)
Output timing measurement
reference levels
All Speeds
1 TTL gate
Unit
30
pF
5
ns
V
0.0–3.0
1.5
V
0.5 V
IO
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
0.5 V
IO
V
Output
Measurement Level
Input
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AM29LV640MH101EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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AM29LV640MH101REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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