參數(shù)資料
型號(hào)： AM29LV640MH101PCI
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, BGA-64
文件頁(yè)數(shù)： 26/62頁(yè)
文件大小： 602K
代理商： AM29LV640MH101PCI
24
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
Table 7.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables
10
and
11
define the valid register
command sequences. Writing
incorrect
address and
data values
or writing them in the
improper se-
quence
may place the device in an unknown state. A
reset command is then required to return the device to
reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the
AC Characteristics
section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the
Erase Suspend/Erase Resume
Commands
section for more information.
The system
must
issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase op-
eration, or if the device is in the autoselect mode. See
the next section,
Reset Command
, for more informa-
tion.
See also
Requirements for Reading Array Data
in the
Device Bus Operations
section for more information.
Addresses
(x16)
40h
41h
42h
43h
44h
Addresses
(x8)
80h
82h
84h
86h
88h
Data
0050h
0052h
0049h
0031h
0033h
Description
Query-unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 μm MirrorBit
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
04 = 29LV800 mode
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word/8 Byte Page, 02 = 8 Word/16 Byte Page
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
45h
8Ah
0008h
46h
8Ch
0002h
47h
8Eh
0001h
48h
90h
0001h
49h
92h
0004h
4Ah
94h
0000h
4Bh
96h
0000h
4Ch
98h
0001h
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
0004h/
0005h
50h
A0h
0001h
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PDF描述
AM29LV640MH101REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
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