參數(shù)資料
型號: AM29LV640MB120RPCI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PBGA64
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
文件頁數(shù): 64/66頁
文件大?。?/td> 836K
代理商: AM29LV640MB120RPCI
62
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
REVISION SUMMARY
Revision A (April 26, 2002)
Initial release.
Revision B (May 23, 2002)
Changed packaging from 64-ball FBGA to 64-ball For-
tified BGA.
Changed Block Diagram: Moved V
IO
from RY/BY# to
Input/Output Buffers.
Changed Note about WP#/ACC pin to indicate internal
pullup to V
CC
.
Revision B+1 (July 31, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added t
RH
parameter to table.
Erase and Program Operations
Added t
BUSY
parameter to table.
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15
μ
s typical to maximum and added 5
μ
s
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20
μ
s to 5
μ
s and added a maxi-
mum of 20
μ
s.
Revision B+2 (August 9, 2002)
Valid Combinations for TSOP Package
Added 100R, 110R, and 120R OPNs.
Valid Combinations for BGA Package
Added 100R, 110R, and 120R OPNs.
CMOS Compatible
Added Note 8.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the I
ACC
specification row.
CFI
Changed text in the third paragraph of CFI to read
“reading array data.”
Revision B+3 (September 19, 2002)
Ordering Information
Deleted FI from Valid Combinations Table.
Revision B+4 (October 15, 2002)
Connection Diagrams
Changed from 56-Pin Standard TSOP to 48-Pin Stan-
dard TSOP.
Product Selector Guide
Added regulated OPNs.
Revision C (December 5, 2002)
Secured Silicon Sector Flash Memory Region, and
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
Noted that the A
CC
function and unlock bypass modes
are not available when the Secured Silicon sector is en-
abled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the Secured Silicon Sector, autoselect, and
CFI functions are unavailable when a program or
erase operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
...”may place the device to an unknown state. A reset
command is then required to return the device to read-
ing array data.”
CMOS Compatible
Added I
LR
parameter to table.
Removed V
IL
, V
IH
, V
OL
, and V
OH
from table and added
V
IL1
, V
IH1
, V
IL2
, V
IH2
, V
OL
, V
OH1
, and V
OH2
from the
CMOS table in the Am29LV640MH/L datasheet.
Changed V
IH1
and V
IH2
minimum to 1.9.
Removed typos in notes.
AC Characteristics and Read-Only Operations
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z Speed Options from 30
ns to 16 ns.
相關(guān)PDF資料
PDF描述
AM29LV640MB120RWHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120RWHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120WHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120WHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB90REF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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