參數(shù)資料
型號： AM29LV640MB120RPCF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述： 64兆位（4個M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導扇區(qū)閃存
文件頁數(shù)： 29/66頁
文件大?。?/td> 836K
代理商： AM29LV640MB120RPCF
February1,2007 26190C8
Am29LV640MT/B
27
D A T A S H E E T
Table 11.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables
12
and
13
define the valid register
command sequences.
Writing incorrect address and
data values or writing them in the improper sequence
can place the device in an unknown state. A reset
command is then required to return the device to read-
ing array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. See
AC Characteristics on page 45
for timing dia-
grams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
Addresses
(x16)
Addresses
(x8)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0010b = 0.23 μm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
9Ch
00C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
9Eh
0002h/
0003h
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
50h
A0h
0001h
Program Suspend
00h = Not Supported, 01h = Supported
相關PDF資料
PDF描述
AM29LV640MB120RPCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120RWHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120RWHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120WHF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MB120WHI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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