參數(shù)資料
型號(hào)： AM29LV640DU90RWHI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝： 12 X 11 MM, 0.80 MM PITCH, FBGA-63
文件頁(yè)數(shù)： 24/57頁(yè)
文件大小： 1467K
代理商： AM29LV640DU90RWHI
September 20, 2002
Am29LV640D/Am29LV641D
23
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
Am29LV640DU90RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV641D 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DH101RZIN Timer Display Panel; No. of Digits/Alpha:4; Accuracy: 0.5%; Connector Type:0.25" Q.C.; Display Font Color:Red; Leaded Process Compatible:Yes; Operating Temp. Min:0 C; Output Current:20A; Output Type:Relay; Output Voltage:115VAC RoHS Compliant: Yes
AM29LV640DL101RZIN Timer-Counter Display Panel; Supply Voltage Max:120VAC; Digit/Alpha Height:0.5"; Display Technology:LED; No. of Digits/Alpha:4; Time Range Max:99.59h; Time Range Min:0.1s; Leaded Process Compatible:Yes RoHS Compliant: Yes
Am29LV641DL101RZIN Timer Display Panel; No. of Digits/Alpha:4; Accuracy: 0.5%; Connector Type:0.25" Q.C.; Display Font Color:Red; Operating Temp. Min:0 C; Output Current:12A; Output Type:Relay; Output Voltage:125VAC; Supply Voltage:115VAC RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640DU-90RWHIT 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063)
AM29LV640MB-90REI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MH112REI 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56
AM29LV640MU101RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90NI 制造商:Advanced Micro Devices 功能描述:
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